NSN 5962-01-400-6120, (5962014006120) - Microcircuit Memory Parts List
Microcircuit Memory parts under NSN 5962-01-400-6120 manufactured by Advanced Micro Devices Inc, Dla Land And Maritime, Philips Semiconductors Ltd. All NSN items provided by NSN Parts Hub are compliant with fit, form, and functionality according to parameters set by the DLA. With over 3 billion new and obsolete parts in our searchable database, you can find your required part number of NSN 5962-01-400-6120 with ease when you use NSN Parts Hub as your purchasing partner. We maintain an unmatched supply-chain network with trusted MFRs and verified PMAs and are the only distributor with a No China Sourcing pledge. Do you require part numbers other than AM27S43A BJA, 8200802JX, ROM PROM HEAD 068, 82008, 8200802JB? Related NSN parts are listed below for your convenience.
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| Alternative NSN: 5962014006120 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 014006120 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc , Dla Land And Maritime , Philips Semiconductors Ltd |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| AM27S43A BJA | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| 8200802JX | dla land and maritime | microcircuit memory | Avl | RFQ |
| ROM PROM HEAD 068 | dla land and maritime | microcircuit memory | Avl | RFQ |
| 82008 | dla land and maritime | microcircuit memory | Avl | RFQ |
| 8200802JB | dla land and maritime | microcircuit memory | Avl | RFQ |
| 8200802JA | dla land and maritime | microcircuit memory | Avl | RFQ |
| 82HS321A BJA | philips semiconductors ltd | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962014006120
| MRC | Criteria | Characteristic |
|---|---|---|
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.04 WATTS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| CQWX | OUTPUT LOGIC FORM | BIPOLAR METAL-OXIDE SEMICONDUCTOR |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND SCHOTTKY AND PROGRAMMABLE AND BIPOLAR AND 3-STATE OUTPUT |
| ADAT | BODY WIDTH | 0.610 INCHES MAXIMUM |
| CZER | MEMORY DEVICE TYPE | ROM |
| CRHL | (NON-CORE DATA) BIT QUANTITY | 32768 |
| SR-1 | SPEC/STD CONTROLLING DATA | |
| ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM |
| CSWJ | (NON-CORE DATA) WORD QUANTITY | 4096 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| SR-1 | MANUFACTURERS CODE | 67268 |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES NOMINAL OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| SR-1 | NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE | 82008 |
| CZEQ | TIME RATING PER CHACTERISTIC | 55.00 NANOSECONDS MAXIMUM ACCESS |
| SR-1 | DEFINITIVE GOVERNMENT SPEC/STD REFERENCE | 8200802JA |
5962-01-400-6120, 5962014006120 Search Related NSN Catalog
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