NSN 5962-01-375-7492, (5962013757492) - Microcircuit Memory Parts List
Microcircuit Memory parts under NSN 5962-01-375-7492 manufactured by Advanced Micro Devices Inc, General Dynamics Corporation, Gte Corp, Gte Government Systems Corp. All NSN items provided by NSN Parts Hub are compliant with fit, form, and functionality according to parameters set by the DLA. With over 3 billion new and obsolete parts in our searchable database, you can find your required part number of NSN 5962-01-375-7492 with ease when you use NSN Parts Hub as your purchasing partner. We maintain an unmatched supply-chain network with trusted MFRs and verified PMAs and are the only distributor with a No China Sourcing pledge. Do you require part numbers other than 15-1326286-1? Related NSN parts are listed below for your convenience.
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| Alternative NSN: 5962013757492 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013757492 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc , General Dynamics Corporation , Gte Corp , Gte Government Systems Corp |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 15-1326286-1 | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| 15-1326286-1 | general dynamics corporation | microcircuit memory | Avl | RFQ |
| 15-1326286-1 | gte corp | microcircuit memory | Avl | RFQ |
| 15-1326286-1 | gte government systems corp | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962013757492
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | ADAU | BODY HEIGHT0 200 INCHES MINIMUM AND 0 220 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | AGAV | END ITEM IDENTIFICATIONHACRMPE REACT BASIC |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CRTL | CRITICALITY CODE JUSTIFICATIONFEAT |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC5 00 MICROAMPERES MAXIMUM INPUT |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 6 VOLTS MINIMUM TOTAL SUPPLY AND 7 0 VOLTS MAXIMUM TOTAL SUPPLY |
| MEMORY | CZER | MEMORY DEVICE TYPEEPROM |
| MEMORY | FEAT | SPECIAL FEATURESELECTROSTATIC DISCHARGE SENSHARDNESS CRITICAL ITEM SELECTED ITEM SELECTED FROM PN 5962-8961404MXX OR 5962-8961405MXXCAGE 67268 |
| MEMORY | ADAT | BODY WIDTH0 585 INCHES MINIMUM AND 0 605 INCHES MAXIMUM |
| MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYMICROCIRCUITPROM128K X 8 27C010 MICROCIRCUITMEMORY DIGITALCMOS 128K X 8-BIT UVEPROMMONOLITHIC SILICON |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC150 00 NANOSECONDS MINIMUM ACCESS AND 170 00 NANOSECONDS MAXIMUM ACCESS |
| MEMORY | CZZZ | MEMORY CAPACITY128K X 8 |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY32 PRINTED CIRCUIT |
| MEMORY | ADAQ | BODY LENGTH1 660 INCHES MINIMUM AND 1 680 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING330 0 MILLIWATTS |
| MEMORY | CBBL | FEATURES PROVIDEDBURN IN MIL-STD-883 CLASS B AND ELECTROSTATIC SENSITIVE AND MONOLITHIC AND RADIATION HARDENED AND ULTRAVIOLET ERASABLE AND TESTED TO MIL-STD-883 AND SELECTED ITEM |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | NHCF | NUCLEAR HARDNESS CRITICAL FEATUREHARDENED |
| MEMORY | SPCL | SPECIAL TEST FEATURESSELECTED AND TESTED FOR RADIATION HARDNESS |
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