NSN 5962-01-373-9121, (5962013739121) - Microcircuit Memory Parts List
Microcircuit Memory parts under NSN 5962-01-373-9121 manufactured by Raytheon Technical Services Company, Raytheon Company, Dla Land And Maritime. All NSN items provided by NSN Parts Hub are compliant with fit, form, and functionality according to parameters set by the DLA. With over 3 billion new and obsolete parts in our searchable database, you can find your required part number of NSN 5962-01-373-9121 with ease when you use NSN Parts Hub as your purchasing partner. We maintain an unmatched supply-chain network with trusted MFRs and verified PMAs and are the only distributor with a No China Sourcing pledge. Do you require part numbers other than G395748-9, PRG395748-9, 8200801JA? Related NSN parts are listed below for your convenience.
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| Alternative NSN: 5962013739121 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013739121 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime , Raytheon Company , Raytheon Technical Services Company |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| G395748-9 | raytheon technical services company | microcircuit memory | Avl | RFQ |
| PRG395748-9 | raytheon technical services company | microcircuit memory | Avl | RFQ |
| PRG395748-9 | raytheon company | microcircuit memory | Avl | RFQ |
| G395748-9 | raytheon company | microcircuit memory | Avl | RFQ |
| 8200801JA | dla land and maritime | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962013739121
| MRC | Criteria | Characteristic |
|---|---|---|
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | BIPOLAR AND MONOLITHIC AND PROGRAMMED AND SCHOTTKY |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| AGAV | III END ITEM IDENTIFICATION | SUB HPA E/I FSCM 49956 |
| CZEQ | TIME RATING PER CHACTERISTIC | 95.00 NANOSECONDS NOMINAL ACCESS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| ZZZP | III PURCHASE DESCRIPTION IDENTIFICATION | 49956-G395748-9 |
| ZZZK | SPECIFICATION/STANDARD DATA | 67268-8200801JA GOVERNMENT STANDARD |
| CZER | MEMORY DEVICE TYPE | PROM |
| CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC |
| ZZZX | DEPARTURE FROM CITED DESIGNATOR | ALTERED BY PROGRAMMING & TESTING |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.04 WATTS |
| CRHL | (NON-CORE DATA) BIT QUANTITY | 32768 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM OUTPUT SINK |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM APPLIED AND 7.0 VOLTS MAXIMUM APPLIED |
| CQWX | OUTPUT LOGIC FORM | BIPOLAR METAL-OXIDE SEMICONDUCTOR |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,MEMORY,DIGITAL,SCHOTTKY BIPOLAR 32K PROM,MONOLITHIC SILICON |
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