NSN 5962-01-355-9500, (5962013559500) - Microcircuit Memory Parts List
Microcircuit Memory parts under NSN 5962-01-355-9500 manufactured by Dla Land And Maritime, Hamilton Sundstrand Corporation, United Technologies Corporation. All NSN items provided by NSN Parts Hub are compliant with fit, form, and functionality according to parameters set by the DLA. With over 3 billion new and obsolete parts in our searchable database, you can find your required part number of NSN 5962-01-355-9500 with ease when you use NSN Parts Hub as your purchasing partner. We maintain an unmatched supply-chain network with trusted MFRs and verified PMAs and are the only distributor with a No China Sourcing pledge. Do you require part numbers other than ROM PROM FAMILY 176, 5962-8686401LA, 90321-3? Related NSN parts are listed below for your convenience.
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| Alternative NSN: 5962013559500 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013559500 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime , Hamilton Sundstrand Corporation , United Technologies Corporation |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| ROM PROM FAMILY 176 | dla land and maritime | microcircuit memory | Avl | RFQ |
| 5962-8686401LA | dla land and maritime | microcircuit memory | Avl | RFQ |
| 90321-3 | hamilton sundstrand corporation | microcircuit memory | Avl | RFQ |
| 90321-3 | united technologies corporation | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962013559500
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.280 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 21 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-9 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -2.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | PAL |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| CZEQ | TIME RATING PER CHACTERISTIC | 50.00 NANOSECONDS MAXIMUM ACCESS |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 650.0 MILLIWATTS |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
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