NSN 5962-01-314-9189, (5962013149189) - Microcircuit Memory Parts List
Microcircuit Memory parts under NSN 5962-01-314-9189 manufactured by Stellar Microelectronics Inc, Sertech Laboratories Inc, Raytheon Technical Services Company, Raytheon Company, Massachusetts Components Inc. All NSN items provided by NSN Parts Hub are compliant with fit, form, and functionality according to parameters set by the DLA. With over 3 billion new and obsolete parts in our searchable database, you can find your required part number of NSN 5962-01-314-9189 with ease when you use NSN Parts Hub as your purchasing partner. We maintain an unmatched supply-chain network with trusted MFRs and verified PMAs and are the only distributor with a No China Sourcing pledge. Do you require part numbers other than 93L422, G101960-863? Related NSN parts are listed below for your convenience.
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Alternative NSN: 5962013149189 |
Item Name: Microcircuit Memory |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 013149189 |
NCB Code: USA (01) |
Manufacturers: Advanced Micro Devices Inc , Fairchild Semiconductor Ltd , Freescale Semiconductor Inc , Massachusetts Components Inc , Raytheon Company , Raytheon Technical Services Company , Sertech Laboratories Inc , Stellar Microelectronics Inc |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
93L422 | stellar microelectronics inc | microcircuit memory | Avl | RFQ |
93L422 | sertech laboratories inc | microcircuit memory | Avl | RFQ |
G101960-863 | raytheon technical services company | microcircuit memory | Avl | RFQ |
G101960-863 | raytheon company | microcircuit memory | Avl | RFQ |
93L422 | massachusetts components inc | microcircuit memory | Avl | RFQ |
93L422 | freescale semiconductor inc | microcircuit memory | Avl | RFQ |
93L422 | fairchild semiconductor ltd | microcircuit memory | Avl | RFQ |
93L422 | advanced micro devices inc | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962013149189
MRC | Criteria | Characteristic |
---|---|---|
AEHX | MAXIMUM POWER DISSIPATION RATING | 495.0 MILLIWATTS |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | LEADLESS FLAT PACK |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 16 INPUT |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | RAM |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 28 LEADLESS |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND MONOLITHIC |
5962-01-314-9189, 5962013149189 Search Related NSN Catalog
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