NSN 5962-01-287-2397, (5962012872397) - Microcircuit Memory Parts List

Microcircuit Memory parts under NSN 5962-01-287-2397 manufactured by Bae Systems Controls Inc, Dla Land And Maritime, Integrated Device Technology Inc, Paaesikunta Logistiikkaosasto. All NSN items provided by NSN Parts Hub are compliant with fit, form, and functionality according to parameters set by the DLA. With over 3 billion new and obsolete parts in our searchable database, you can find your required part number of NSN 5962-01-287-2397 with ease when you use NSN Parts Hub as your purchasing partner. We maintain an unmatched supply-chain network with trusted MFRs and verified PMAs and are the only distributor with a No China Sourcing pledge. Do you require part numbers other than 312A3435P2, 8413204YA, 84132, IDT6167LA35LB, 10133807? Related NSN parts are listed below for your convenience.

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Alternative NSN: 5962012872397
Item Name: Microcircuit Memory
Federal Supply Class (FSC): 5962 Microcircuits Electronic
NIIN: 012872397
NCB Code: USA (01)
Manufacturers: Bae Systems Controls Inc , Dla Land And Maritime , Integrated Device Technology Inc , Paaesikunta Logistiikkaosasto
Part No Manufacturer Item Name QTY RFQ
312A3435P2 bae systems controls inc microcircuit memory Avl RFQ
8413204YA dla land and maritime microcircuit memory Avl RFQ
84132 dla land and maritime microcircuit memory Avl RFQ
IDT6167LA35LB integrated device technology inc microcircuit memory Avl RFQ
10133807 paaesikunta logistiikkaosasto microcircuit memory Avl RFQ

Characteristics Data of NSN 5962012872397

MRCCriteriaCharacteristic
MEMORYADAQBODY LENGTH0 415 INCHES MINIMUM AND 0 435 INCHES MAXIMUM
MEMORYADATBODY WIDTH0 280 INCHES MINIMUM AND 0 300 INCHES MAXIMUM
MEMORYADAUBODY HEIGHT0 055 INCHES MINIMUM AND 0 075 INCHES MAXIMUM
MEMORYAEHXMAXIMUM POWER DISSIPATION RATING1 0 WATTS
MEMORYAFGAOPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS
MEMORYAFJQSTORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS
MEMORYCBBLFEATURES PROVIDEDELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND WENABLE
MEMORYCQSJINCLOSURE MATERIALCERAMIC
MEMORYCQSZINCLOSURE CONFIGURATIONLEADLESS FLAT PACK
MEMORYCQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
MEMORYCQZPINPUT CIRCUIT PATTERN17 INPUT
MEMORYCWSGTERMINAL SURFACE TREATMENTSOLDER
MEMORYCZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE
MEMORYCZEQTIME RATING PER CHACTERISTIC35 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 35 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORYCZERMEMORY DEVICE TYPERAM
MEMORYTESTTEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC
MEMORYTTQYTERMINAL TYPE AND QUANTITY20 LEADLESS

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