NSN 5962-01-227-8417, (5962012278417) - Microcircuit Memory Parts List
Microcircuit Memory parts under NSN 5962-01-227-8417 manufactured by Toshiba Corp, Sharp Electronics Corporation, Peak Ryzex Inc, Intersil Corporation, Hitachi America Ltd. All NSN items provided by NSN Parts Hub are compliant with fit, form, and functionality according to parameters set by the DLA. With over 3 billion new and obsolete parts in our searchable database, you can find your required part number of NSN 5962-01-227-8417 with ease when you use NSN Parts Hub as your purchasing partner. We maintain an unmatched supply-chain network with trusted MFRs and verified PMAs and are the only distributor with a No China Sourcing pledge. Do you require part numbers other than TC5565P-15, LH5268A-10LL, 107883-001, HM6264P-15, HM6264AP-15? Related NSN parts are listed below for your convenience.
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Alternative NSN: 5962012278417 |
Item Name: Microcircuit Memory |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 012278417 |
NCB Code: USA (01) |
Manufacturers: Hitachi America Ltd , Intersil Corporation , Peak Ryzex Inc , Sharp Electronics Corporation , Toshiba Corp |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
TC5565P-15 | toshiba corp | microcircuit memory | Avl | RFQ |
LH5268A-10LL | sharp electronics corporation | microcircuit memory | Avl | RFQ |
107883-001 | peak ryzex inc | microcircuit memory | Avl | RFQ |
HM6264P-15 | intersil corporation | microcircuit memory | Avl | RFQ |
HM6264AP-15 | hitachi america ltd | microcircuit memory | Avl | RFQ |
HM6264P-15 | hitachi america ltd | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012278417
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH36 0 MILLIMETERS NOMINAL |
MEMORY | ADAT | BODY WIDTH13 4 MILLIMETERS NOMINAL |
MEMORY | ADAU | BODY HEIGHT5 2 MILLIMETERS NOMINAL |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-10 0 TO 85 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHIGH SPEED AND LOW POWER AND STATIC OPERATION |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN21 INPUT |
MEMORY | CRHL | BIT QUANTITY65536 |
MEMORY | CSWJ | WORD QUANTITY8192 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT |
5962-01-227-8417, 5962012278417 Search Related NSN Catalog
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