NSN 5962-01-214-0943, (5962012140943) - Microcircuit Memory Parts List
Microcircuit Memory parts under NSN 5962-01-214-0943 manufactured by Bae Systems Controls Inc, Dla Land And Maritime, Philips Semiconductors Ltd. All NSN items provided by NSN Parts Hub are compliant with fit, form, and functionality according to parameters set by the DLA. With over 3 billion new and obsolete parts in our searchable database, you can find your required part number of NSN 5962-01-214-0943 with ease when you use NSN Parts Hub as your purchasing partner. We maintain an unmatched supply-chain network with trusted MFRs and verified PMAs and are the only distributor with a No China Sourcing pledge. Do you require part numbers other than 311A7853P66, 299A9982P66, 144A9552P6, ROM PROM FAMILY 051, S82S191I-883B? Related NSN parts are listed below for your convenience.
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Alternative NSN: 5962012140943 |
Item Name: Microcircuit Memory |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 012140943 |
NCB Code: USA (01) |
Manufacturers: Bae Systems Controls Inc , Dla Land And Maritime , Philips Semiconductors Ltd |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
311A7853P66 | bae systems controls inc | microcircuit memory | Avl | RFQ |
299A9982P66 | bae systems controls inc | microcircuit memory | Avl | RFQ |
144A9552P6 | bae systems controls inc | microcircuit memory | Avl | RFQ |
ROM PROM FAMILY 051 | dla land and maritime | microcircuit memory | Avl | RFQ |
S82S191I-883B | philips semiconductors ltd | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012140943
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 290 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 560 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 170 INCHES NOMINAL |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDPROGRAMMABLE AND 3-STATE OUTPUT AND WDECODED OUTPUT |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMMETAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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