NSN 5962-01-170-8174, (5962011708174) - Microcircuit Memory Parts List
Microcircuit Memory parts under NSN 5962-01-170-8174 manufactured by Bae Systems, Dla Land And Maritime, G E C Marconi S3i Ltd, Mbda Incorporated, Mmi Amd. All NSN items provided by NSN Parts Hub are compliant with fit, form, and functionality according to parameters set by the DLA. With over 3 billion new and obsolete parts in our searchable database, you can find your required part number of NSN 5962-01-170-8174 with ease when you use NSN Parts Hub as your purchasing partner. We maintain an unmatched supply-chain network with trusted MFRs and verified PMAs and are the only distributor with a No China Sourcing pledge. Do you require part numbers other than PAL-004, ROM PROM HEAD 053, 446 1 05381 003, B84674, PAL12L6MJ883B? Related NSN parts are listed below for your convenience.
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| Alternative NSN: 5962011708174 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011708174 |
| NCB Code: USA (01) |
| Manufacturers: Bae Systems , Dla Land And Maritime , G E C Marconi S3i Ltd , Mbda Incorporated , Mmi Amd |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| PAL-004 | bae systems | microcircuit memory | Avl | RFQ |
| ROM PROM HEAD 053 | dla land and maritime | microcircuit memory | Avl | RFQ |
| 446 1 05381 003 | g e c marconi s3i ltd | microcircuit memory | Avl | RFQ |
| B84674 | mbda incorporated | microcircuit memory | Avl | RFQ |
| PAL12L6MJ883B | mmi amd | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011708174
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH1 090 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 185 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDPROGRAMMABLE AND HIGH SPEED AND 3-STATE OUTPUT AND BIPOLAR AND SCHOTTKY |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN12 INPUT |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC45 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY20 PRINTED CIRCUIT |
5962-01-170-8174, 5962011708174 Search Related NSN Catalog
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