NSN 5962-01-169-2615, (5962011692615) - Microcircuit Memory Parts List
Microcircuit Memory parts under NSN 5962-01-169-2615 manufactured by Advanced Micro Devices Inc, Dla Land And Maritime, Fairchild Semiconductor Ltd, Philips Semiconductors Ltd. All NSN items provided by NSN Parts Hub are compliant with fit, form, and functionality according to parameters set by the DLA. With over 3 billion new and obsolete parts in our searchable database, you can find your required part number of NSN 5962-01-169-2615 with ease when you use NSN Parts Hub as your purchasing partner. We maintain an unmatched supply-chain network with trusted MFRs and verified PMAs and are the only distributor with a No China Sourcing pledge. Do you require part numbers other than AM27S13DMB, ROM PROM FAMILY 008, 93446DMQB, S82S131F-883B? Related NSN parts are listed below for your convenience.
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| Alternative NSN: 5962011692615 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011692615 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc , Dla Land And Maritime , Fairchild Semiconductor Ltd , Philips Semiconductors Ltd |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| AM27S13DMB | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| ROM PROM FAMILY 008 | dla land and maritime | microcircuit memory | Avl | RFQ |
| 93446DMQB | fairchild semiconductor ltd | microcircuit memory | Avl | RFQ |
| S82S131F-883B | philips semiconductors ltd | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011692615
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.740 INCHES MINIMUM AND 0.870 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.120 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 794.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | BIPOLAR AND MONOLITHIC AND BURN IN AND PROGRAMMED AND SCHOTTKY AND W/ACTIVE PULL-UP AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| PMLC | PRECIOUS MATERIAL AND LOCATION | TERMINAL SURFACE OPTION GOLD |
| PRMT | PRECIOUS MATERIAL | GOLD |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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