NSN 5962-01-165-3107, (5962011653107) - Microcircuit Memory Parts List
Microcircuit Memory parts under NSN 5962-01-165-3107 manufactured by Hewlett Packard Inc, Keysight Technologies Inc, Stmicroelectronics Ltd. All NSN items provided by NSN Parts Hub are compliant with fit, form, and functionality according to parameters set by the DLA. With over 3 billion new and obsolete parts in our searchable database, you can find your required part number of NSN 5962-01-165-3107 with ease when you use NSN Parts Hub as your purchasing partner. We maintain an unmatched supply-chain network with trusted MFRs and verified PMAs and are the only distributor with a No China Sourcing pledge. Do you require part numbers other than 1818-0831, MK36064, MK36000P-4 MASKED, MK36000P-4? Related NSN parts are listed below for your convenience.
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| Alternative NSN: 5962011653107 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011653107 |
| NCB Code: USA (01) |
| Manufacturers: Hewlett Packard Inc , Keysight Technologies Inc , Stmicroelectronics Ltd |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 1818-0831 | hewlett packard inc | microcircuit memory | Avl | RFQ |
| 1818-0831 | keysight technologies inc | microcircuit memory | Avl | RFQ |
| MK36064 | stmicroelectronics ltd | microcircuit memory | Avl | RFQ |
| MK36000P-4 MASKED | stmicroelectronics ltd | microcircuit memory | Avl | RFQ |
| MK36000P-4 | stmicroelectronics ltd | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011653107
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.250 INCHES NOMINAL |
| ADAT | BODY WIDTH | 0.500 INCHES NOMINAL |
| ADAU | BODY HEIGHT | 0.187 INCHES NOMINAL |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | TEST SET 9900A |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND W/ENABLE AND 3-STATE OUTPUT AND HIGH PERFORMANCE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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