NSN 5962-01-155-1465, (5962011551465) - Microcircuit Memory Parts List
Microcircuit Memory parts under NSN 5962-01-155-1465 manufactured by Hewlett Packard Inc, Intel, Keysight Technologies Inc, National Semiconductor Corp, Stmicroelectronics Ltd. All NSN items provided by NSN Parts Hub are compliant with fit, form, and functionality according to parameters set by the DLA. With over 3 billion new and obsolete parts in our searchable database, you can find your required part number of NSN 5962-01-155-1465 with ease when you use NSN Parts Hub as your purchasing partner. We maintain an unmatched supply-chain network with trusted MFRs and verified PMAs and are the only distributor with a No China Sourcing pledge. Do you require part numbers other than 1818-0341, D2117-3, MM5290J-3, MK4116J-3? Related NSN parts are listed below for your convenience.
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Alternative NSN: 5962011551465 |
Item Name: Microcircuit Memory |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 011551465 |
NCB Code: USA (01) |
Manufacturers: Hewlett Packard Inc , Intel , Keysight Technologies Inc , National Semiconductor Corp , Stmicroelectronics Ltd |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
1818-0341 | hewlett packard inc | microcircuit memory | Avl | RFQ |
D2117-3 | intel | microcircuit memory | Avl | RFQ |
1818-0341 | keysight technologies inc | microcircuit memory | Avl | RFQ |
MM5290J-3 | national semiconductor corp | microcircuit memory | Avl | RFQ |
MK4116J-3 | stmicroelectronics ltd | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011551465
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH0 750 INCHES MINIMUM AND 0 790 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 265 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 165 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1000 0 MILLIWATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-10 080 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDDYNAMIC AND HERMETICALLY SEALED AND HIGH PERFORMANCE AND HIGH RELIABILITY AND MONOLITHIC AND POSITIVE OUTPUTS AND 3-STATE OUTPUT |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN8 INPUT |
MEMORY | CRHL | BIT QUANTITY16384 |
MEMORY | CSWJ | WORD QUANTITY16384 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC20 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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