NSN 5962-01-146-8999, (5962011468999) - Microcircuit Memory Parts List
Microcircuit Memory parts under NSN 5962-01-146-8999 manufactured by Dla Land And Maritime, Intel, Raytheon Company, Stmicroelectronics Ltd. All NSN items provided by NSN Parts Hub are compliant with fit, form, and functionality according to parameters set by the DLA. With over 3 billion new and obsolete parts in our searchable database, you can find your required part number of NSN 5962-01-146-8999 with ease when you use NSN Parts Hub as your purchasing partner. We maintain an unmatched supply-chain network with trusted MFRs and verified PMAs and are the only distributor with a No China Sourcing pledge. Do you require part numbers other than ROM PROM FAMILY 020, M2716, 616733-902, 616483-902, MKB2716T-8? Related NSN parts are listed below for your convenience.
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| Alternative NSN: 5962011468999 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011468999 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime , Intel , Raytheon Company , Stmicroelectronics Ltd |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| ROM PROM FAMILY 020 | dla land and maritime | microcircuit memory | Avl | RFQ |
| M2716 | intel | microcircuit memory | Avl | RFQ |
| 616733-902 | raytheon company | microcircuit memory | Avl | RFQ |
| 616483-902 | raytheon company | microcircuit memory | Avl | RFQ |
| MKB2716T-8 | stmicroelectronics ltd | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011468999
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.220 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 100.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND ERASABLE AND HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE AND W/TRANSPARENT LID AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 13 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 6.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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