NSN 5962-01-126-5112, (5962011265112) - Microcircuit Memory Parts List
Microcircuit Memory parts under NSN 5962-01-126-5112 manufactured by General Semiconductor Inc, Honeywell Inc, Ncr Ltd. All NSN items provided by NSN Parts Hub are compliant with fit, form, and functionality according to parameters set by the DLA. With over 3 billion new and obsolete parts in our searchable database, you can find your required part number of NSN 5962-01-126-5112 with ease when you use NSN Parts Hub as your purchasing partner. We maintain an unmatched supply-chain network with trusted MFRs and verified PMAs and are the only distributor with a No China Sourcing pledge. Do you require part numbers other than ER2055, ER2055S, 4045271-255, NCR2055? Related NSN parts are listed below for your convenience.
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| Alternative NSN: 5962011265112 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011265112 |
| NCB Code: USA (01) |
| Manufacturers: General Semiconductor Inc , Honeywell Inc , Ncr Ltd |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| ER2055 | general semiconductor inc | microcircuit memory | Avl | RFQ |
| ER2055S | general semiconductor inc | microcircuit memory | Avl | RFQ |
| 4045271-255 | honeywell inc | microcircuit memory | Avl | RFQ |
| NCR2055 | ncr ltd | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011265112
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.260 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.350 INCHES MINIMUM AND 0.390 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 750.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND MONOLITHIC AND ELECTRICALLY ALTERABLE AND W/CLOCK AND BIDIRECTIONAL |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 19 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -35.0 VOLTS MINIMUM POWER SOURCE AND 3.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 07187-4045271 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW |
| TTQY | TERMINAL TYPE AND QUANTITY | 22 PRINTED CIRCUIT |
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