NSN 5962-01-107-1082, (5962011071082) - Microcircuit Memory Parts List
Microcircuit Memory parts under NSN 5962-01-107-1082 manufactured by Advanced Micro Devices Inc, Applied Communications Research Inc, Bae Systems Information And Electronic Systems Integration Inc, Boeing Company The, C And D Zodiac Inc. All NSN items provided by NSN Parts Hub are compliant with fit, form, and functionality according to parameters set by the DLA. With over 3 billion new and obsolete parts in our searchable database, you can find your required part number of NSN 5962-01-107-1082 with ease when you use NSN Parts Hub as your purchasing partner. We maintain an unmatched supply-chain network with trusted MFRs and verified PMAs and are the only distributor with a No China Sourcing pledge. Do you require part numbers other than B2716, AM2716 DLB, D2716, A3253, 314084P1? Related NSN parts are listed below for your convenience.
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| Alternative NSN: 5962011071082 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011071082 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc , Applied Communications Research Inc , Bae Systems Information And Electronic Systems Integration Inc , Boeing Company The , C And D Zodiac Inc , Capewell Components Company Llc , Cmc Electronics Ltd , Dla Land And Maritime , Drs Sustainment Systems Inc , Drs Test And Energy Management Llc , Freescale Semiconductor Inc , Harris Llc , Honeywell International Inc , Intel , Marconi Avionics Ltd , National Semiconductor Corp , Navair And Navsea Managed , Raytheon Company , Raytheon E Systems Inc , Rochester Electronics Llc , Rockwell Collins Inc , Safran , Selex Es Limited , Stmicroelectronics Ltd , Texas Instruments Incorporated |
Characteristics Data of NSN 5962011071082
| MRC | Criteria | Characteristic |
|---|---|---|
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 26.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| ADAQ | BODY LENGTH | 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 525.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -65.0/+135.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND PROGRAMMABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 13 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
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