NSN 5962-01-106-8182, (5962011068182) - Microcircuit Memory Parts List
Microcircuit Memory parts under NSN 5962-01-106-8182 manufactured by Edo Corporation, Intersil Communications Inc, Intersil Corporation, Intersil Inc. All NSN items provided by NSN Parts Hub are compliant with fit, form, and functionality according to parameters set by the DLA. With over 3 billion new and obsolete parts in our searchable database, you can find your required part number of NSN 5962-01-106-8182 with ease when you use NSN Parts Hub as your purchasing partner. We maintain an unmatched supply-chain network with trusted MFRs and verified PMAs and are the only distributor with a No China Sourcing pledge. Do you require part numbers other than 423848-1, HM1-6551B-8, HM-6551-8, HM1-6551B-2, 1M6551MJF 883B? Related NSN parts are listed below for your convenience.
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Alternative NSN: 5962011068182 |
Item Name: Microcircuit Memory |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 011068182 |
NCB Code: USA (01) |
Manufacturers: Edo Corporation , Intersil Communications Inc , Intersil Corporation , Intersil Inc |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
423848-1 | edo corporation | microcircuit memory | Avl | RFQ |
HM1-6551B-8 | intersil communications inc | microcircuit memory | Avl | RFQ |
HM1-6551B-8 | intersil corporation | microcircuit memory | Avl | RFQ |
HM-6551-8 | intersil corporation | microcircuit memory | Avl | RFQ |
HM1-6551B-2 | intersil corporation | microcircuit memory | Avl | RFQ |
1M6551MJF 883B | intersil inc | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011068182
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 080 INCHES NOMINAL |
MEMORY | ADAT | BODY WIDTH0 388 INCHES NOMINAL |
MEMORY | ADAU | BODY HEIGHT0 085 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING22 0 MILLIWATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND LOW POWER AND SYNCHRONOUS AND WDISABLE AND WENABLE AND 3-STATE OUTPUT |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN16 INPUT |
MEMORY | CRHL | BIT QUANTITY1024 |
MEMORY | CSWJ | WORD QUANTITY256 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC8 3 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY22 PRINTED CIRCUIT |
5962-01-106-8182, 5962011068182 Search Related NSN Catalog
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