NSN 5962-01-060-1317, (5962010601317) - Microcircuit Memory Parts List
Microcircuit Memory parts under NSN 5962-01-060-1317 manufactured by Bae Systems Information And Electronic Systems Integration Inc, Minnesota Mining And Mfg Co 3M, Mmi Amd. All NSN items provided by NSN Parts Hub are compliant with fit, form, and functionality according to parameters set by the DLA. With over 3 billion new and obsolete parts in our searchable database, you can find your required part number of NSN 5962-01-060-1317 with ease when you use NSN Parts Hub as your purchasing partner. We maintain an unmatched supply-chain network with trusted MFRs and verified PMAs and are the only distributor with a No China Sourcing pledge. Do you require part numbers other than 1086871P7, 1088727T6, 6351 1J? Related NSN parts are listed below for your convenience.
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| Alternative NSN: 5962010601317 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 010601317 |
| NCB Code: USA (01) |
| Manufacturers: Bae Systems Information And Electronic Systems Integration Inc , Minnesota Mining And Mfg Co 3M , Mmi Amd |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 1086871P7 | bae systems information and electronic systems integration inc | microcircuit memory | Avl | RFQ |
| 1088727T6 | bae systems information and electronic systems integration inc | microcircuit memory | Avl | RFQ |
| 1086871P7 | minnesota mining and mfg co 3m | microcircuit memory | Avl | RFQ |
| 6351 1J | mmi amd | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962010601317
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 960 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 310 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 185 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE0 075 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | AGAV | END ITEM IDENTIFICATIONC5-A |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND PROGRAMMED |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN13 INPUT |
| MEMORY | CRHL | BIT QUANTITY4096 |
| MEMORY | CSWJ | WORD QUANTITY1024 |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC175 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC60 00 NANOSECONDS MAXIMUM ACCESS |
| MEMORY | CZER | MEMORY DEVICE TYPEPROM |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT |
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